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Article title TEMPERATURNO’S ARCHITECTURE OF THE STABLE VOLTAGE REFERENCE SUPPLY WHICH HAVE NOT BEEN CONNECTED TO WIDTH OF THE BANDGAP OF SILICON
Authors E.I. Starchenko, I.V. Barilov
Section SECTION II. IP-CORES MIXED-SIGNAL SYSTEM ON CHIP
Month, Year 05, 2014 @en
Index UDC 621. 316
DOI
Abstract The possibility of constructing a reference voltage source (RVS), output voltage can be adjusted with respect to arbitrarily and be both above and below the band gap of silicon. For this purpose is used a differential stage, to one input of which is connected with a voltage source a negative temperature drift formed on the diode. As a result, in one arm of a differential stage formed current with a negative temperature drift in the other – with a positive. For RVS with a positive output voltage necessary to use p-n-p transistors or FETs type p-channel type. Using FET control yuschim p-n junction channel and p -type differential stage allows, among other things, to achieve high radiation resistance. The obtained analytical expressions and simulation results show the promise of this method for constructing RVS, has not been widely used.

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Keywords Reference supply source; differential stage; temperature drift.
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