Article

Article title LOCAL PROBE OXIDATION AND IT’S MAIN PROBLEMS
Authors V.I. Shevyakov
Section SECTION I. NANOELECTRONICS
Month, Year 04, 2011 @en
Index UDC 539.216.2
DOI
Abstract The main purpose of this work involves problem analysis encountered during local probe oxidation of semiconductor wafers and ultra-thin metal films. Main goal of presented work is theoretical analysis of local probe oxidation kinetics, to identify factors that determine its performance. Distinctive kinetics features were studied for local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, W films. It was shown that kinetics of process are determined properties of material. They were specific resistance, presence of natural oxide film, correlations of specific density of metal and oxide, electrochemical constant of oxidation process. Vanadium was chosen as the best metal that provide maximum productivity of anodic oxidation.

Download PDF

Keywords Atomic force microscopy; local probe oxidation; productivity of method.
References 1. Lemeshko S., Gavrilov S., Shevyakov V., Roschin V. and Solomatenko R. Investigation of tipinduced ultra thin Ti film oxidation kinetics // Nanotechnology. – 2001. – Vol. 12, № 3. – P. 273-276.
2. Jen Fin Lin, Chih Kuang Tai, Shuan Li Lin. Theoretical and experimental studies for nanooxidation of silicon wafer by ac atomic force microscopy // J. Appl. Phys. Lett. – 2006. – Vol. 99. – P. 054312-1 – 054312-11.
3. Гаврилов С.А., Путря М.Г., Шевяков В.И. Наноструктуры и элементы наноэлектроники на базе метода локального зондового окисления // Нанотехнологии в электронике / Под ред. Ю.А. Чаплыгина. – М.: Техносфера, 2005. – С. 73-98.
4. Юнг Л. Анодные оксидные пленки. – Л.: Энергия, 1967. – 232 с.
5. Anders S., Raoux S., Krishnan K. et al. Plasma distribution of cathodic arc deposition systems // J. Appl. Phys. – 1996. – Vol. 79. – P. 6785-6789.

Comments are closed.