Article

Article title SI/SI1-xGEx:ER/SI STRUCTURES FOR SILICON NANOPHOTONICS
Authors L.V. Krasilnikova, M.V. Stepikhova, N.V. Yurasova, Z.F. Krasilnik, V.G. Shengurov, А.S. Kolomiytsev
Section SECTION I. NANOELECTRONICS
Month, Year 04, 2011 @en
Index UDC 535.37:546.65
DOI
Abstract In this work, we discuss the prospects for the realization of silicon nanophotonic device structures on Si/Si1-хGex:Er/Si basis. In particular, the light emitters and lasers for the wavelength range of 1.54 μm being compatible with the modern VLSI technology are considered. The results of the analysis carried out to demonstrate the waveguiding properties of Si/Si1-хGex:Er/Si structures and their correlation with the parameters of Si1-хGex:Er heterolayers are presented. The possible variants of the waveguides and resonators being developed on the basis of Si/Si1-хGex:Er/Si structures as well the ways for their practical realization are discussed. The special attention is devoted to the luminescent properties of Si/Si1-хGex:Er/Si structures and the problem of Si1-хGex:Er layer relaxation. Finally, the estimation for the luminescence quantum efficiency of Si/Si1-хGex:Er/Si structures is given, and the ability to achieve the population inversion of Er ion states in such structures under optical pumping was demonstrated.

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Keywords Er3+ ions; Si/SiGe heterostructures; nanophotonic components; photoluminescence.
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