Authors L.V. Krasilnikova, M.V. Stepikhova, N.V. Yurasova, Z.F. Krasilnik, V.G. Shengurov, А.S. Kolomiytsev
Month, Year 04, 2011 @en
Index UDC 535.37:546.65
Abstract In this work, we discuss the prospects for the realization of silicon nanophotonic device structures on Si/Si1-хGex:Er/Si basis. In particular, the light emitters and lasers for the wavelength range of 1.54 μm being compatible with the modern VLSI technology are considered. The results of the analysis carried out to demonstrate the waveguiding properties of Si/Si1-хGex:Er/Si structures and their correlation with the parameters of Si1-хGex:Er heterolayers are presented. The possible variants of the waveguides and resonators being developed on the basis of Si/Si1-хGex:Er/Si structures as well the ways for their practical realization are discussed. The special attention is devoted to the luminescent properties of Si/Si1-хGex:Er/Si structures and the problem of Si1-хGex:Er layer relaxation. Finally, the estimation for the luminescence quantum efficiency of Si/Si1-хGex:Er/Si structures is given, and the ability to achieve the population inversion of Er ion states in such structures under optical pumping was demonstrated.

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Keywords Er3+ ions; Si/SiGe heterostructures; nanophotonic components; photoluminescence.
References 1. Silicon Nanophotonics: Basic Principles, Present Status and Perspectives / ed. by L. Khriachtchev - World Scientific, 2008. – 400 p.
2. Krasilnik Z.F., Aleshkin V.Ya., Andreev B.A. et al. SMBE grown uniformly and selectively doped Si:Er structures for LEDs and lasers // in “Towards the First Silicon Laser” Eds. L. Pavesi, S. Gaponenko, L. Dal Negro. NATO Science Series. Kluwer Academic Publishers. – 2003. – P. 445-454.
3. Humlicek, J. Properties of Strained and Relaxed Silicon Germanium // ed. by E. Kasper, INSPEC, the Institution of Electrical Engineers, London, U.K. – 1995. – P. 121-131.
4. Stepikhova M., Krasil’nikova L., Krasil’nik Z. et al. Si/SiGe:Er/Si Structures for Laser Realization: Theoretical Analysis and Luminescent Studies // Journal of Crystal Growth. – 2006. – Vol. 288, № 1. – P. 65-69.
5. Krasilnik Z.F., Andreev B.A., Gregorkievicz T. et al. Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications // Journal of Materials Research. – 2006. – Vol. 21, № 3. – P. 574-583.
6. Адамс М. Введение в теорию оптических волноводов. – М.: Мир, 1984. – 512 с.
7. Armani D.K., Kippenberg T.J., Spillane S.M. et al. Ultra-high-Q toroid microcavity on a chip // Nature. – 2003. – Vol. 421. – P. 925-928.
8. Нанотехнология: физика, процессы, диагностика / Под ред. В.В. Лучинина, Ю.М. Таирова. – М.: Физматлит, 2006. – 552 с.
9. Светлов С.П., Шенгуров В.Г., Чалков В.Ю. и др. Гетероэпитаксиальные структуры Si1-xGex/Si(100), полученные сублимационной молекулярно-лучевой эпитаксией кремния в среде GeH4 // Изв. РАН, сер. физическая. – 2001. – Т. 65, № 2. – С. 203-206.
10. Paul D.J. Si/SiGe heterostructures: from material and physics to devices and circuits // Semiconductor Science and Technology. – 2004. – Vol. 19. – P. R75-R108.
11. Красильникова Л.В., Степихова М.В., Байдакова Н.А. и др. Оптически активные центры в гетероструктурах Si/Si1-xGex:Er, связанные с ионами Er3+ // ФТП. – 2009. – Т. 43. – Вып. 7. – С. 909-916.
12. Krasilnikova L., Stepikhova M., Drozdov Y. et al. On the role of heterolayer relaxation in luminescence response of Si/SiGe:Er structures // Physica Status Solidi C. – 2011. – Vol. 8, №. 3. – P. 1044-1048.
13. Степихова М.В., Красильникова Л.В., Дроздов Ю.Н. и др. Излучающие свойства гетероструктур Si/Si1-xGex:Er // Труды XV Международного симпозиума “Нанофизика и наноэлектроника”. – Нижний Новгород, 2011. – Т. 2. – С. 527-528.
14. Степихова М.В., Жигунов Д.М., Шенгуров В.Г. и др. Инверсная населенность уровней энергии ионов эрбия при передаче возбуждения от полупроводниковой матрицы в структурах на основе кремния/германия // Письма в ЖЭТФ. – 2005. – Т. 81. – Вып. 10. – С. 614-617.

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