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Article title INVESTIGATION OF THE SILICON SUBSTRATE SURFACE PROFILING USING FOCUSED ION BEAMS IN SUBMICRON AREA
Authors О.А. Ageev, А.S. Kolomiytsev, A.L. Gromov, O.I. Ilin
Section SECTION III. NANOSYSTEMIC TECHNOLOGY
Month, Year 04, 2011 @en
Index UDC 621.382
DOI
Abstract In experimental studies of technological modes of submicron surface profiling of a silicon substrate with nanometer resolution using focused ion beams. The dependencies of the geometrical parameters of nanostructures by the accelerating voltage and ion beam current and exposure time of the ion beam at a point with different numbers of passes of the beam pattern. The dependence of the etching velocity of semiconductor materials by ion beam current is defined. Theranges of technological modes of submicron profiling are determined. The prototype of the test element of nanofluidics is formed. The results can be used in the development process of manufacturing a perspective element base of nanoelectronic technology.

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Keywords Nanotechnology; focused ion beams; atomic forces microscopy; nanofluidics.
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