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Article title FORMING AND INVESTIGATION OF ARSENIDE GALLIUM NANOSTRUCTURE AT NANOTECHNOLOGICAL SYSTEM NANOFAB NTF-9
Authors A.V. Rukomoykin, M.S. Solodovnik
Section SECTION VI. BRIEF MESSAGES
Month, Year 04, 2011 @en
Index UDC 621.38-022.532
DOI
Abstract Nanowhisker and structure from porous nanostructured GaAs was obtained by method molecular-beam epitaxy, integrated in consist ultrahigh-vacuum nanotechnological system NANOFAB NTF-9. Nanowhiskers gallium arsenide was obtain on substrates GaAs(100) without preliminary infliction catalytic centre. Porous GaAs was formed directly in process at epitaxy-growth, rather than traditional methods electrochemical etching. Show result ofinvestigation obtain structure by method scanning electron microscopy on microscope NOVA NANOLAB.

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Keywords Molecular-beam epitaxy; GaAs; nanowhisker; por-GaAs.
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