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Article title HYDROGEN SENSOR ON BASIS OF HETEROSTRUCTURE ALGAN/GAN WITH PT GATE FOR EXTREME CONDITIONS OPERATION
Authors A.N. Zalozniy, M.D. Bavidgev, S.I. Rembeza, D.M. Krasovitskiy
Section SECTION III. ELECTRONICS, INSTRUMENT MAKING, MACHINE BUILDING
Month, Year 02, 2010 @en
Index UDC 621.3.049.774.2
DOI
Abstract Possibility of manufacturing and use of a sensor control of hydrogen on the basis of hetero-structure AlGaN/GaN with platinum (Pt) a shutter is investigated. The semi-conductor hetero-structure has been received by a method molekuljarno-beam epitaxy and the subsequent vacuum dusting of platinum. Sensitivity to carbonic oxide (CO), to acetylene (C2H2) and nitrous oxide (NO2) is found out.

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Keywords Gas sensor; hydrogen; two dimensional electron gas.
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