Article

Article title GROWTH OF HIGH TEMPERATURE ALN/ALGAN BUFFER LAYERS FOR DISLOCATION REDUCTION IN GAN BASED HEMT HETEROSTRUCTURES
Authors A.N. Alexeev, D.M. Krasovitsky, S.I. Petrov, V.P. Chaly, V.V. Mamaev, V.G. Sidorov
Section SECTION I. NANOELECTRONICS
Month, Year 09, 2014 @en
Index UDC 621.382.211
DOI
Abstract The features of GaN based HEMT heterostructures growth using PA and NH3 MBE are discussed. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown using ammonia at extremely high temperatures (up to 1150oC) allows to improve drastically the structural quality of the GaN layers and reduce dislocation density down to 9.108–1.109 cm-2. The use of such buffer layers allows to grow high quality GaN/AlGaN heterostructures using both methods. On the other hand, unlike the ammonia MBE, which is difficult to use at T<500 оC (because of low decomposition efficiency of ammonia), PA-MBE is very effective at low temperatures, for example for growth of InAlN layers lattice-matched to GaN. The results of the growth of high quality GaN/InAlN heterostructures by using both PA-MBE and NH3-MBE (at extremely high ammonia flux) are shown.

Download PDF

Keywords Molecular beam epitary; geterostructure; HEMT; buffer; gallium nitride.
References 1. Lamba S. et al. Electron microscopy investigations of purity of AlN interlayer in AlxGa1−xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy, Applied Physics Letters, 2013, Vol. 102, No. 19, pp. 191-604.
2. Ng H. M. et al. The role of dislocation scattering in n-type GaN films, Applied physics letters, 1998, Vol. 73, No. 6, pp. 821-823.
3. Nakamura S., Mukai T., Senoh M. In situ monitoring and Hall measurements of GaN grown with GaN buffer layers, J. Appl. Phys., 1992, Vol. 71, pp. 5543-5549.
4. Koblmьller G., Wu F., Mates T. [et al.] High electron mobility GaN grown under N-rich conditions by plasma assisted molecular beam epitaxy, Applied Physics Letters, 2007, Vol. 91, pp. 221905-1–221905-3.
5. James S. Speck et al. Molecular beam epitaxy of In AlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source, Applied Physics Letters, 2012, Vol. 100, No. 7, pp. 072107.

Comments are closed.