|Article title||GROWTH OF HIGH TEMPERATURE ALN/ALGAN BUFFER LAYERS FOR DISLOCATION REDUCTION IN GAN BASED HEMT HETEROSTRUCTURES|
|Authors||A.N. Alexeev, D.M. Krasovitsky, S.I. Petrov, V.P. Chaly, V.V. Mamaev, V.G. Sidorov|
|Section||SECTION I. NANOELECTRONICS|
|Month, Year||09, 2014 @en|
|Abstract||The features of GaN based HEMT heterostructures growth using PA and NH3 MBE are discussed. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown using ammonia at extremely high temperatures (up to 1150oC) allows to improve drastically the structural quality of the GaN layers and reduce dislocation density down to 9.108–1.109 cm-2. The use of such buffer layers allows to grow high quality GaN/AlGaN heterostructures using both methods. On the other hand, unlike the ammonia MBE, which is difficult to use at T<500 оC (because of low decomposition efficiency of ammonia), PA-MBE is very effective at low temperatures, for example for growth of InAlN layers lattice-matched to GaN. The results of the growth of high quality GaN/InAlN heterostructures by using both PA-MBE and NH3-MBE (at extremely high ammonia flux) are shown.|
|Keywords||Molecular beam epitary; geterostructure; HEMT; buffer; gallium nitride.|
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