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Article title THE INFLUENCE OF TECHNOLOGICAL PARAMETERS ON STRUCTURAL AND ELECTROPHYSICAL PROPERTIES OF LEAD ZIRCONATE TITANATE THIN FILMS
Authors D.A. Kovalenko, V.V. Petrov, V.G. Klindukhov
Section SECTION II. NANOMATERIALS
Month, Year 09, 2014 @en
Index UDC 53.043
DOI
Abstract The technology of thin ferroelectric lead zirconate titanate (PTZ) films on the oxygenated silicon- containing wafers using radiofrequency reactive sputtering method is described. Process variables are chamber gas tension, the electrode applied electric power and film formation time. The crystalline quantitative content in PZT films, as well as the process variable effect, is defined involving the X-ray diffraction analysis. The electrode applied electric power contributes significantly to the crystal quantitative content in PZT films. The PZT growth mechanism is studied using the scanning electron microscopy. Thickness growth of ferroelectric PZT films is about 17 nm/min and occurs on theoxidized silicon surface applying Stranski-Krastanov growth mode. Relationships between electrophysical properties and technological formation parameters, as well as relationships between dielectric phase difference value (∆φ) and field frequency polarization value, are elucidated.

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Keywords Lead zirconate titanate; ferroelectric materials; high-frequency reactive sputtering; Stranski-Krastanov growth mode; polarization; dielectric phase difference.
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