Article

Article title PROFILING OF THE TIPS FOR SCANNING PROBE NANODIAGNOSTICS USING FOCUSED ION BEAMS
Authors A.V. Bykov, A.S. Kolomiytsev, V.V. Polyakova, V.A. Smirnov
Section SECTION III. NANOSYSTEMS TECHNOLOGY
Month, Year 09, 2014 @en
Index UDC 621.38-022.532
DOI
Abstract The results of experimental investigations profiling probes for atomic force microscopy (AFM) and scanning tunneling microscopy (STM) by focused ion beam (FIB) are represented. Cantilevers with tip radius of curvature of about 10 nm and a high aspect ratio of 1:50 are obtained with using the local ion-beam etching method FIP. Profiling tungsten STM probe is produced by method FIP, obtained by electrochemical etching workpieces with a diameter 0.1 mm. It is shown that the application of local etching FIP reduces the curvature radius of the tip STM probe from 84.4 nm to 8.5 nm. The research results of test objects profiled probes show the possibility of enhance the resolution and measurement authenticity of test objects by methods AFM and STM compared with standard AFM cantilevers and STM probes. The results can be used in the development of methods and means of probe Nanodiagnostics structures of micro- and nano-electronics, nano-structured materials, MEMS and NEMS.

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Keywords Nanotechnologies; nanomaterials; scanning probe microscopy; probe; cantilever; focused ion beam; ion beam treatment.
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