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Article title THE RESEARCH OF THE SUBSTRATES SUBMICRON PROFILING USING FOCUSED GALLIUM ION BEAM FOR PRODUCTION OF THE NANOSCALE STRUCTURES
Authors A.S. Kolomiytsev
Section SECTION III. NANOSYSTEMS TECHNOLOGY
Month, Year 09, 2014 @en
Index UDC 621.382
DOI
Abstract The results of experimental studies of the modes of submicron profiling of a substrates surface are presented by the focused ionic beam of gallium. The dependences of the etching depth and ion beam current, the total exposure time; the angle of the face inclination of the ion beam current, the value overlap parameter, the total exposure time; arithmetic average roughness of the ion beam current, the value overlap parameter, the time of the ion beam in situ exposure and the total exposure time for silicon and gallium arsenide substrates are obtained. It has been established that the minimum value of an average arithmetic roughness for Si and GaAs is reached at overlap values of 50% and 25 % respectively. It is shown that the slope faces to structures on Si and GaAs increases in the range of current of 1 pA – 3 nA. The results of experimental studies can be used in the development process of the structures formation and elements of micro- and nanoelectronics, integrated optoelectronics with application the method of focused ion beams.

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Keywords Nanotechnology; nanodiagnostics; focused ion beams; nanoscale profiling; nanosystems technology.
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