Article

Article title DESIGN LOW-TEMPERATURE SENSOR TO NITROGEN DIOXIDE
Authors T.S. Mikhilova, T.N. Myasoedova
Section SECTION IV. ELECTRONICS AND NANOTECHNOLOGY
Month, Year 08, 2015 @en
Index UDC 544.72.05: 621.382.2/3
DOI
Abstract Receiving a gas-sensitive element based on thin-film materials of structure of SiO2ZrOx and research of its properties was a research objective. Served as its tasks: confirmations of expediency of a choice of zirconium as the main component of films; development of a method of formation of gas-sensitive material; studying of its morphological structure and touch characteristics. The choice of oxides of zirconium as the main material when forming a low-temperature sensor is reasonable on the basis of results of the carried-out literary review. The technology of formation of thin films of structure of SiO2ZrOx is developed sol-gel by method. By means of SEM-images features of their morphological structure are considered. It was shown that formation of monoclinic ZrO2 is observed at 200°C and cubic ZrO2 is formed at 300 °C. So this fact is also effect to the gas sensitive properties to NO2 gas. Gas-sensitive properties of films of zirconium to nitrogen dioxide at 30 °C. As a result it is shown that materials of structure of SiO2ZrOx possess selective gas-sensitivity in relation to nitrogen dioxide on condition of existence of monoklinny structure of crystallites on their surface.

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Keywords Semiconductor elements; zirconium oxides; sol-gel method; crystal structure of a surface of samples; low-temperature gas-sensitivity of films; nitrogen dioxide.
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