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Article title MODEL OF MOSFET WITH PHOSPHATE ANODIC OXIDE SILICON FILM AS A GATE DIELECTRIC
Authors L.P. Mileshko, Yu.N. Varzaryov, A.V. Makharinets
Section SECTION IV. ELECTRONICS AND NANOTECHNOLOGY
Month, Year 08, 2015 @en
Index UDC 541.13:621.382.323.001.57
DOI
Abstract The purpose of this study is construction and verification of mathematical model of MOSFET with integrated n-type channel, than can be used in radio circuits, and is manufactured using a one-step diffusion of phosphorus into the silicon from phosphoric anodic oxide film with different values of doping. The objective of this study was to obtain a model that will give a reasonable agreement with the experimental data and to calculate parameters of transistor according to this model. The novelty of this work is the use of a mathematical model developed for the MOS transistors with induced channel, to describe the work of MOSFETs with integrated channel, after a slight modification. Examination confirmed the possibility of such use. A model of the MOSFET with integrated n-channel created by diffusion of phosphorus in the silicon from anodic oxide films was proposed. This parameters of the FET were calculated: capacitance of gate dielectric, trans conductance and drain current. It is shown that this model gives a satisfactory agreement with the experimental data. Due to minimization of technical processes of manufacturing operations, it is expected to increase the repeatability of parameters, low noise ratio (minimum number of high-treatment operations decreases number of defects in the silicon structure). The proposed model can be used for manufacturing transistors for operation in radio connections, especially in small-signal gain mode, for example, low-noise amplifiers. In this case, the regional model is irrelevant, cause transistors in such schemes do not exit from saturation, and simplicity of such model allows to get the result quickly.

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Keywords Model of MOS transistor; gate dielectric; phosphate anodic oxide films of silicon.
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