Authors L.P. Mileshko, Yu.N. Varzaryov, A.V. Makharinets
Month, Year 08, 2015 @en
Index UDC 541.13:621.382.323.001.57
Abstract The purpose of this study is construction and verification of mathematical model of MOSFET with integrated n-type channel, than can be used in radio circuits, and is manufactured using a one-step diffusion of phosphorus into the silicon from phosphoric anodic oxide film with different values of doping. The objective of this study was to obtain a model that will give a reasonable agreement with the experimental data and to calculate parameters of transistor according to this model. The novelty of this work is the use of a mathematical model developed for the MOS transistors with induced channel, to describe the work of MOSFETs with integrated channel, after a slight modification. Examination confirmed the possibility of such use. A model of the MOSFET with integrated n-channel created by diffusion of phosphorus in the silicon from anodic oxide films was proposed. This parameters of the FET were calculated: capacitance of gate dielectric, trans conductance and drain current. It is shown that this model gives a satisfactory agreement with the experimental data. Due to minimization of technical processes of manufacturing operations, it is expected to increase the repeatability of parameters, low noise ratio (minimum number of high-treatment operations decreases number of defects in the silicon structure). The proposed model can be used for manufacturing transistors for operation in radio connections, especially in small-signal gain mode, for example, low-noise amplifiers. In this case, the regional model is irrelevant, cause transistors in such schemes do not exit from saturation, and simplicity of such model allows to get the result quickly.

Download PDF

Keywords Model of MOS transistor; gate dielectric; phosphate anodic oxide films of silicon.
References 1. Bredikhin I.S., Volkova T.A., Mileshko L. P., Palienko A.N., Chistyakov Yu.D. Primenenie anodnykh okisnykh plenok, legirovannykh fosforom, dlya izgotovleniya MOP-tranzistorov [The application of anodic oxide films doped with phosphorus, for the manufacture of MOS transistors], V kn.: «Aktiviruemye protsessy tekhnologii mikroelektroniki» [In the book "Activated processes of microelectronics technology"]. Taganrog: Izd-vo TRTI, 1976, Issue 2, pp. 206-209.
2. Mileshko L.P. Anodnoe elektroliticheskoe legirovanie termicheskikh oksidnykh plenok kremniya [Anode electrolytic alloying thermal oxide silicon films], FKhOM [Physics and Chemistry of Materials Treatment], 2002, No. 6, pp. 55-59.
3. Mileshko L.P., Avdeev S.P. Reanodirovanie anodnykh oksidnykh plenok v legiruyushchikh elektrolitakh [Renderowanie anodic oxide films in the alloy electrolytes], FKhOM [Physics and Chemistry of Materials Treatment], 2004, No. 4, pp. 61-63.
4. Mileshko L.P., Avdeev S.P. Vliyanie protsessa anodnogo okisleniya kremniya na parametry diffuzii primesey bora i fosfora iz legirovannykh oksidnykh plenok [The influence of the process of anodic oxidation of silicon on the parameters of impurity diffusion of boron and phosphorus doped oxide films], Izvestiya vuzov. Elektronika [Proceedings of universities. Electronics], 2004, No. 5, pp. 25-32.
5. Antognetli P., Massobrio G. (Eds.) Semiconductor Device Modeling with SPICE. New York: McGraw-Hill, 1987.
6. Gergel' V.A., Marasanoe A.V., Oreshkin G.I. Prostaya analiticheskaya model' korotkokanal'nogo MOP-tranzistora dlya chislennogo modelirovaniya skhemotekhnicheskikh zadach [A simple analytical model korotkovolnovoi the MOS transistor for circuit simulation numerical tasks], Mikroelektronika [Microelectronics], 1989, Vol. 18, Issue 2, pp. 162-165.
7. Solov'ev A.K. Proektirovanie BIS v KMOP bazise [LSI design in CMOS basis]: Uchebnoe posobie po kursu "Proek-tirovanie BIS", po napravleniyu "Elektronika i mikroelektronika" [The textbook for the course "LSI Design" in the direction "electronics and microelectronics"]. Moscow: Izd-vo MEI, 2003, 108 p.
8. Tsividis Y.P., Suyama K. MOSFET modeling for analog circuit CAD: Problems and prospects, IEEE Journal of Solid-State Circuits, 1994, Vol. 34, No. 3, pp. 210-216.
9. Denisenko V.V. Kompaktnye modeli MOP-tranzistorov dlya mikro- i nanoelektroniki [Compact models of MOS transistors for micro - and nanoelectronics]. Moscow: Fizmatlit, 2010, 408 p.
10. McAndrew C.C. Practical modeling for circuit simulation, IEEE Journal of Solid-State Circuits, 1998, Vol. 34, No. 3, pp. 439-448.
11. Biryukov V.N. Diagnostika modeley bar'ernoy emkosti dioda [Diagnostics of models of the barrier capacitance of the diode], Radiotekhnika i elektronika [Radioengineering and Electronics], 2009, Vol. 54, No. 9, pp. 1144-1148.
12. Biryukov V.N. Chetyrekhparametricheskaya kompaktnaya model' polevogo tranzistora s korotkim kanalom [Compact four-parameter model field-effect transistor with a short channel], Trudy Mezhdunarodnoy nauchno-tekhnicheskoy konferentsii «Nanotekhnologii-2010» [Proceedings of International scientific and technical conference "Nanotechnologies 2010"]. Part 2. Taganrog: Izd-vo TTI YuFU, 2010, pp. 114-115.
13. Biryukov V.N., Pilipenko A.M. Diagnostika staticheskikh modeley dioda [Diagnosis of static models of a diode], Radiotekhnika i elektronika [Radioengineering and Electronics], 2009, Vol. 54, No. 5, pp. 604-610.
14. Bourenkov V., McCarthy K.G., Mathewson A.A. A Hybrid Table/Analytical Approach to MOSFET modeling, Proceedings of International Conference on Microelectronic Test Structures. Monterey, CA, 2003, pp. 142-147.
15. Pilipenko A.M., Biryukov V.N. Issledovanie parametrov polevykh tranzistorov s izolirovannym zatvorom pri nizkikh temperaturakh [Study of parameters of field-effect transistors with insulated gate at low temperatures], Uspekhi sovremennoy radioelektroniki [Achievements of Modern Radioelectronics], 2011, No. 9, pp. 66-70.
16. Valiev K.A., Korolev M.A. Tsifrovye integral'nye skhemy na MDP-tranzistorakh [Digital integrated circuits for MOS transistors]. Moscow: Sovetskoe radio, 1971, 384 p.
17. Bocharov L.N. Polevye tranzistory [Field-effect transistors]. Moscow: Energiya, 1976, 80 p.
18. Zi S. Fizika poluprovodnikovykh priborov [Physics of semiconductor devices]. In 2 books. Book 1: Translation from English. 2nd ed. – Moscow: Mir, 1984, 456 p.
19. Svistova T.V. Tverdotel'naya elektronika: ucheb. Posobie [Solid-state electronics: study guide]. Voronezh: GOUVPO "Voronezhskiy gosudarstvennyy tekhnicheskiy universitet", 2006. Part 2, 173 p.
20. Bordakov E.V., Panteleev V.I. Metodicheskie ukazaniya k vypolneniya laboratornykh rabot po distsipline «Proektirovanie i konstruirovanie poluprovodnikovykh priborov i integral'nykh skhem» [Methodical instructions to laboratory works on discipline "Design and construction of semiconductor devices and integrated circuits"]. Voronezh: VGTU, 2005, 45 p.
21. Allen F., Sanches-Sinepsko E. Elektronnye skhemy s pereklyuchaemymi kondensatorami [Electronic circuit with switched capacitors], Radio i svyaz' [Radio and Communication], 1989, pp. 15-17.
22. Gurtov V.A. Tverdotel'naya elektronika: uchebnoe posobie [Solid-state electronics: study guide]. Petrozavodsk: Izd-vo Petrozavodskogo gosudarstvennogo universiteta, 2004, 312 p.

Comments are closed.