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Article title UV SENSORS OBTAINED ON AACVD GROWN NANOCRYSTALLINE ZnO FILMS
Authors О.А. Ageev, Jong-Gul Yoon, Е.G. Zamburg, Yu.N. Varzarev, V.N. Dzhuplin, D.A. Golosov, D.А. Khakhulin
Section SECTION II. FUNDAMENTAL PROBLEMS OF NANOTECHNOLOGY
Month, Year 09, 2015 @en
Index UDC 621.383.45
DOI
Abstract Sensors of UV radiation are important elements of many systems in the defense and aero-space industries. As a result, it is a remarkable goal to improve the basic parameters of these devices. We present the results of a development of a production technology of UV-sensor with high photosensitivity based on nanocrystalline films of ZnO. Films were produced by aerosol assisted chemical vapor deposition. By varying the temperature and the type of substrate we controlled crystallographic structure of ZnO film, and, as a result, photosensitivity. Eight samples were produced: four samples were grown on amorphous ITO under temperatures 300 °C, 350 °C, 400 °C and 450 °C. Investigation of the parameters of these samples showed, that it is necessary to use two temperatures: 300 °C and 420 °C. We produced four more samples: on sapphire under 300°C, on sapphire under 420 °C, on sapphire under 300°C and with introduction of Pt and on Si under 300°C with introduction of Pt. These are sample 5, 6, 7 and 8, respectively. We acquired XRDS of these films. We also measured the current-voltage and current-time characteristics of these samples. At 1 V dark currents for samples 5, 6, 7 and 8 are 0,2 mA, 1,64 mA, 0,02 mA and 0,5 mA, respectively. After 300 seconds of illumination with mercury lamp currents in samples 5, 6, 7 and 8 reached values of 6,6 mA, 1,70 mA, 13,1 mA and 11,3 m. We have found that there is a correlation between crystal structure and photosensitivity. Possible reason for the difference in photoresponse is defects on crystallites’ borders. We compared main parameters of the sensor with the results of other studies.

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Keywords ZnO; thin film; nanocrystalline film; UV-sensor; AACVD.
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