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Article title DEVELOPMENT OF NONVOLATILE MEMORY CELL BASED MEMRISTOR STRUCTURES WITH VERTICALLY ALIGNED CARBON NANOTUBES
Authors M.V. Ilina, Yu.F. Blinov, V.A. Smirnov, A.A. Konshin, Trinh Van Muoi
Section SECTION II. FUNDAMENTAL PROBLEMS OF NANOTECHNOLOGY
Month, Year 09, 2015 @en
Index UDC 621.38-022.532
DOI
Abstract One of the priority areas of evolution of modern nanoelectronics is the development and creation of nonvolatile memory elements with high speed and density information recording. A promising direction in this area is the development and study of nanoscale memristor structures. In this paper the principle of operation of the nonvolatile memory cell based on memristor structure with the vertically aligned carbon nanotube (VA CNT) is presented. It is shown that the resistive switching of the memristor structure is associated with deformation of the VA CNT under the influence of an external electric field and the van der Waals interaction with the separated by a tunneling gap upper electrode. The theoretical studies of the influence of diameter, length and Young"s modulus of the VA CNT, the tunneling gap and the applied voltage on the resistive switching of the structure based on the VA CNT are carried. Values of the van der Waals, electrostatic and elastic forces occurring in the structure are evaluated. It is shown that the structure based on VA CNT with Young"s modulus of 1 TPa, height of 2 µm and diameter of 10 to 100 nm at tunneling gap between the top of the nanotube and the upper electrode from 1,0 to 1,5 nm has memristor effect. Based on the memristor structure with the VA CNT the nonvolatile memory cell with a switching time of ~ 10-12 s, and read voltage less than 1 V, write voltage about 2 V, and the erase voltage of about 6 V is developed. The obtained results can be used to develop a nonvolatile memory of high speed and density of information recording, based on memristor structures with vertically aligned carbon nanotubes.

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Keywords Nanotechnology; nanoelectronics; memristor; vertically aligned carbon nanotubes; VA CNT; nonvolatile memory; piezoelectric charge; deformation.
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