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Article title GALLIUM ARSENIDE EPITAXIAL STRUCTURES PROFILING BY LOCAL ANODIC OXIDATION
Authors V.A. Smirnov, V.I. Avilov, L.R. Saubanova, M.S. Solodovnik, V.V. Polyakova, O.G. Tsukanova, S.Yu. Krasnoborodko
Section SECTION II. FUNDAMENTAL PROBLEMS OF NANOTECHNOLOGY
Month, Year 09, 2015 @en
Index UDC 621.38-022.532
DOI
Abstract The development of electronic device technology is related to the application of nanotechnology methods, which make it possible to decrease sizes, to increase the density of structures of active cells of integrated chips on a crystal and to decrease the power consumed. Among a wide spectrum of methods of nanodimensional profiling of the surface based on probe nanolithography, one of the most promising for positioning and localization of self-organizing semiconductor nanostructures (SSN) growth is the local anodic oxidation (LAO), the use of which provides a high spatial resolution, the possibility of profiling the surface of the substrate without any additional operations associated with the deposition of a photoresist, and high reproducibility at minimum disturbances in the structural perfection of the epitaxial layer The results of studies of the effect of technological modes of local anodic oxidation on the formation of oxide nanostructures (ONS) on the surface of epitaxial structures (ES) of gallium arsenide. The influence of the amplitude and duration of the voltage pulses applied to the tip-substrate system and the oscillation amplitude of the cantilever on the geometrical parameters of the gallium arsenide ONS. The influence of the modes of LAO on the geometrical parameters profiled nanostructures (PNS) obtained on the surface of ES GaAs after etching of ONS formed by LAO. It has been established that the increase of the amplitude and pulse width of the applied voltage in the LAO leads to an increase height, depth and diameter of profiled and oxide nanostructures on the ES surface of gallium arsenide. It has been shown that increasing the vibration amplitude of the cantilever leads to a decrease in depth and a diameter of PNS. Thus, it is shown that local anodic oxidation is a promising method of nanolithography, the use of which allows us to profile the substrate surface with a nanometer resolution. The results may be used in developing technological processes for fabricating the element base of nanoelectronics.

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Keywords Nanolithography; local anodic oxidation; atomic force microscopy; oxide nanostructures; gallium arsenide.
References 1. Taylor C. et al. Directed self-assembly of quantum structures by nanomechanical stamping using probe tips, Nanotechnology, 2008, Vol. 19, pp. 1-10.
2. Nakamura H. et al. Novel nano-scale site-controlled InAs quantum dot assisted by scanning tunneling microscope probe, Physica E, 2000, Vol. 7, pp. 331-336.
3. Kapsa J. et al. STM and FIB nano-structuration of surfaces to localize InAs/InP(001) quantum dots, Applied Surface Science, 2004, Vol. 226, pp. 31-35.
4. Song H.Z. et al. Growth process of quantum dots precisely controlled by an AFM-assisted technique, Physica E, 2004, Vol. 21, pp. 625-630.
5. Alekseev A.N., Sokolov I.A., Ageev O.A., Konoplev B.G. Kompleksnyy podkhod k
tekhnologicheskomu osnashcheniyu tsentra prikladnykh razrabotok. Opyt realizatsii v NOTs «Nanotekhnologii» YuFU [Comprehensive approach to technological equipping for R&D center. The experience in implementing of SEC «Nanotechnology» SFedU], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2011, No. 4 (117), pp. 207-210.
6. Ageev O.A., Alyab'eva N.I., Konoplev B.G., Polyakov V.V., Smirnov V.A. Photoactivation of
the processes of formation of nanostructures by local anodic oxidation of a titanium film, Semiconductors, 2010, Vol. 44, No. 13, pp. 1703-1708.
7. Ageev O.A., Konoplev B.G., Polyakov V.V., Svetlichnyy A.M., Smirnov V.A. Issledovanie rezhimov fotonnostimulirovannoy zondovoy nanolitografii metodom lokal'nogo anodnogo okisleniya plenki titana [Study modes potenatialities probe nanolithography using local anodic oxidation film of titanium], Nano- i mikrosistemnaya tekhnika [Nano and Microsystem Technique, 2008, No. 1 (90), pp. 14–16.
8. Ageev A.O., Konoplev B.G., Polyakov V.V., Svetlichnyi A.M., Smirnov V.A. Photoassisted scanning-probe nanolithography on Ti films, Russian Microelectronics, 2007, Vol. 36, No. 6, pp. 353-357.
9. Avilov V.I., Ageev O.A., Kolomiitsev A.S., Konoplev B.G., Smirnov V.A., Tsukanova O.G. Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods, Semiconductors, 2014, Vol. 48, No. 13, pp. 1757-1762.
10. Ageev O.A., Smirnov V.A., Solodovnik M.S., Rukomoikin A.V., Avilov V.I. A study of the formation modes of nanosized oxide structures of gallium arsenide by local anodic oxidation, Semiconductors, 2012, Vol. 46, No. 13, pp. 1616-1621.
11. Ageev O.A., Smirnov V.A., Avilov V.I. i dr. Issledovanie rezhimov lokal'nogo anodnogo okisleniya epitaksial'nykh struktur arsenida galliya [Gallium arsenide epitaxial structures local anodic oxidation regimes investigation], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2011, No. 4 (117), pp. 8-13.
12. Allwood D.A. et al. Characterization of oxide layers on GaAs substrates, Thin Solid Films, 2000, Vol. 364, pp. 333-39.
13. Tanner B.K. et al. Kinetics of native oxide film growth on epiready GaAs, Materials Science and Engineering B, 2001, Vol. 80, pp. 99-103.
14. Vilar M.R. et al. Characterization of wet-etched GaAs (100) surfaces, Surface and Interface Analysis, 2005, Vol. 37, pp. 673-682.
15. MVI 14-2009 Metodika vypolneniya izmereniy geometricheskikh parametrov massivov oksidnykh nanorazmernykh struktur metodom atomno-silovoy mikroskopii [MIM 14-2009 a Methodology for measuring geometrical parameters of arrays of nanoscale oxide structures by atomic force microscopy].
16. Avilov V.I., Ageev O.A., Kolomiitsev A.S., Konoplev B.G., Smirnov V.A. The formation and study of the memristors matrix based on titanium oxide by using probe nanotechnologies methods, Semiconductors, 2014, Vol. 48, No. 13, pp. 1757-1762.
17. Ageev O.A., Ilin O.I., Kolomiytsev A.S., Lisitsyn S.A., Smirnov V.A., Zamburg E.G. Formation of High Aspect Ratio Nanostructures using Focused Ion Beam Induced Deposition of Carbon, Applied Mechanics and Materials, 2015, Vol. 752-753, pp. 154-158.
18. Avilov V.I., Ageev O.A., Blinov Yu.F., Konoplev B.G., Polyakov V.V., Smirnov V.A, and Tsukanova O.G. Simulation of the Formation of Nanosize Oxide Structures by Local Anode Oxidation of the Metal Surface, Technical Physics, 2015, Vol. 60, No. 5, pp. 717-723.
19. Avilov V.I., Ageev O.A., Smirnov V.A., Solodovnik M.S., and Tsukanova O.G. Studying the Modes of Nanodimensional Surface Profiling of Gallium Arsenide Epitaxial Structures by Local Anodic Oxidation, Nanotechnologies in Russia, 2015, Vol. 10, No. 3–4, pp. 214-219.
20. Ageev O.A., Kolomiytsev A.S., Bykov A.V., Smirnov V.A., Kots I.N. Fabrication of advanced probes for atomic force microscopy using focused ion beam, Microelectronics Reliability, 2015, No. 55, pp. 2131-2134.

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