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Article title RESEARCH OF ELECTROPHYSICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS FOR MEMS STRUCTURES FORMING
Authors E.Yu. Gusev, J.Y. Jityaeva, Al.V. Bykov, V.V. Bespoludin
Section SECTION III. NANOMATERIALS
Month, Year 09, 2015 @en
Index UDC 621.38.049.77
DOI
Abstract This paper presents results of the deposition of polycrystalline silicon films for the formation of inertial sensor elements of MEMS/NEMS. Polysilicon films have been formed by plasma-enhanced chemical vapor deposition. The influence of technological parameters such as power, chamber pressure and temperature on the properties of silicon films has been investigated. The grain size and root-mean square (RMS) roughness increased with the temperature and pressure were shown. However, the RMS roughness has reached maximum at 600°С with following decreasing. Polycrystalline structure of layers has been confirmed using reflection high-energy electron diffraction and ellipsometry. The electrical parameters of doped films have been measured by contactless and Hall/van der Pauw techniques. Concentration, mobility of charge carrier, resistivity and sheet resistance of doped films were amounted of 1,9–2,4·1020 cm-3, 27,5–34,1 cm2/V·s, 9,35–9,7·10-4 Ω·cm; 2,0 Ω/sq (film thickness of 300 nm) and 8,9 Ω/sq (film thickness of 2 µm), respectively. The microhardness and Young modulus of obtained films were 15–20 GPa and 150–250 GPa were measured by nanoindentation using atomic force microscopy. Process parameters have been identified for the films with characteristics that are desired and satisfied with the requirements for conducting and structural layers of microelectromechanical systems. The samples of inertial masses based on the polycrystalline silicon / silicon oxide / silicon substrate (poly-Si/SiO2/n-type Si(100)) structure have been prepared. The results of the study can be useful for manufacturing processes development and fabrication of MEMS gyroscopes and accelerometers.

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Keywords Nanomaterials; MEMS; surface micromachining; PECVD; properties; polycrystalline silicon.
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