Authors P.Yu. Voloshchenko, Yu.P. Voloshchenko, S.B. Malkov
Month, Year 11, 2015 @en
Index UDC 521.3.01
Abstract An analytical study of wave composition in a distributed parameter electronic circuit through methods of equivalent circuits, equivalent sine wave and complex amplitude, nodal-pair and active one-port, Kirchhoff laws and Tellegen theorem is carried out. It models electric and nonlinear electronic interacting processes of a microstrip uniform electromagnetic field and charge carriers in two microwave semiconductor devices. Consider that its geometrical configuration and environment properties remain invariable along the longitudinal coordinate. The excitement of connecting line with unknown impedance of the semiconductor device by ideal power source we illustrate simultaneously by the schemes of the one-port quadripole with distributed nonlinear parameters, nonreciprocal transmission quadripole and the equivalent two-wire transmission line loaded with a resistive negatron nonlinear element. In the symbolical analysis of electromagnetic waves diffraction by semiconductor devices the input and transfer complex frequency characteristics of one-dimensional electronic circuit is characterized by S-and A - parameters, the standing waves solution of Helmholtz equations depending on impact intensity, negatron operating mode and voltage and current wave front phase speed in it. It is shown that boundary conditions at the beginning and end of analyzed long line with nonlinear element depends on impact intensity and delayed reaction, signal overlapping interference phenomenon. The coherent wave transformation laws are analyzed using the example of idealized quarter wave line loaded with resistance-negatron two-terminal element. Its parameters providing a traveling-wave mode and a one-way oscillatory energy transmission between semiconductor devices are defined.

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Keywords A long line; a resistance-negatron nonlinear element; the theory of distributed parameter electronic circuit.
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