Authors V.V. Petrov, M.Z. Nadda, K.K. Arutyunov, V.A. Mangashov
Month, Year 12, 2015 @en
Index UDC 538.971
Abstract Films of nanocomposite material of structure on the basis of oxides of silicon (SiO2), oxides of tin (SnOx) and carbon nanotubes (СNT) are created. Films were received zol-gel by method from spirit solutions on the basis of a etraetoksisilan (TEOS), chloride of tin and UNT with various ratio of TEOS/СNT and Sn/СNT on weight. Carbon nanotubes thus were modified by carboxyl groups – СOOH. Films were formed on the oxidized plates of silicon and on the basis of the created films test structures for research of electrophysical and gas-sensitive properties were made. By means of electrophysical researches it is established that the received films of structure of SiO2SnOx–CNT, possess semiconductor properties. Width of the forbidden zone calculated from temperature dependences of provodimost depended on Sn/CNT ratio in solution. At a certain ratio of Sn/CNT in solution equal 163,8 films of gas-sensitive material of structure of SiO2SnOx –CNT possessing the smallest values of width of the forbidden zone Eg = (0,6–0,63) эВ are formed of it. Research of gas-sensitive properties showed that films are sensitive to nitrogen dioxide with concentration of 10–250 ppm at temperatures of relatives to the room. The maximum value of gas-sensitivity at a temperature 50oС samples of films of structure of SiO2SnOx–CNT created from TEOS solutions with big concentration of UNT and chloride of tin (IV) with the mass relation of Sn/CNT equal 163.8, having the smallest value of width of the forbidden zone possess. The increase in the quantitative content of compounds of tin in the TEOS initial solution to some value of which films of gas-sensitive material are formed further, leads to reduction of width at it the forbidden zone, time of a response and time of restoration.

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Keywords Gas sensitive material; nanocomposite material; sol-gel method; carbon nanotubes; tin oxide; gas sensitive properties.
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