Article

Article title OPTIMIZATION OF HIGH-QUALITY SAPPHIRE SUBSTRATES PRODUCTION TECHNOLOGICAL PROCESSES FOR INTEGRATED CIRCUITS
Authors Yu.V. Klunnikova
Section SECTION I. ELECTRONICS
Month, Year 04, 2016 @en
Index UDC 621.382
DOI
Abstract The method and the results of the sapphire (α-Al2O3) products technological process optimization for integrated circuits are described. Differences of the proposed method of sapphire substrates technological process optimization for integrated circuits are the following: the use of expert evaluation methods and experiment planning during simulation process, the development of optimization model, and the use of specialized database. The calculation of crystallization time and the defects level was made. The model for different sapphire defects level definition and optimization time parameters of sapphire crystals technological process is presented. The article describes the generalized structure of technological process control for sapphire products reception. The software in C ++ allows to calculate the sapphire crystal growth and treatment modes, to choose the optimum process parameters of sapphire growth and treatment, to give the forecast of sapphire defect characteristics, and to find the law of sapphire growth and treatment. This software is multipurpose and can be used for growing crystals from various materials. Based on these studies the technology of sapphire growth with orientation (1102) by the horizontal directed crystallization method with low content of microparticles (104 cm -3) and low-residual stresses (less than 3 MPa) is presented. The author describes the main technical data of the sapphire substrates made by the developed technology and compares them with other manufacturers.

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Keywords Sapphire; optimization; technological process
References 1. Bagdasarov Kh.S., Goryainov L.A. Teplo- i massoperenos pri vyrashchivanii monokristallov napravlennoy kristallizatsiey [Heat and mass transfer in growing single crystals of directional solidification]. Moscow: Fizmatlit, 2007, 224 p.
2. Dobrovinskaya E.R., Lytvynov L.А., Pishchik V. Sapphire: material, manufacturing, applications. US: Springer, 2009, 362 p.
3. Nizhankovskyi S.V., Tanko A.V., Sidelnikova N.S., Adonkin G.T. Formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium-aluminum garnet grown by horizontal directed crystallization method, Crystal Research and Technology, 2015, No. 50 (3), pp. 223-229.
4. Rogov V.V. Physicochemistry in processes of the formation of functional surfaces of glass and sapphire (α-Al2O3) components for electronics and optical systems in tribochemical polishing, Journal of superhard materials, 2009, No. 3, Vol. 3, pp. 74-83.
5. Bagdasarov Kh.S., Goryainov L.A. Razvitie gorizontal'noy napravlennoy kristallizatsii tugoplavkikh dielektricheskikh materialov [The development of horizontal directional solidification of refractory dielectric materials], Inzhenerno-fizicheskiy zhurnal [Journal of Engineering Physics and Thermophysics], 1998, Vol. 71, No. 2, pp. 248-253.
6. Sun C., Xue D. Crystal growth and design of sapphire: Experimental and calculation studies of anisotropic crystal growth upon pulling directions, Crystal Growth and Design, 2014, No. 14 (5), pp. 2282-2287.
7. Bagdasarov Kh.S. Vysokotemperaturnaya kristallizatsiya iz rasplava [High-temperature crystallization from the melt]. Moscow: Fizmatlit, 2004, 160 p.
8. Klunnikova Yu.V. Model' vliyaniya parametrov tekhnologicheskogo protsessa polucheniya sapfira na kachestvo kristallov [Model of the sapphire growth technological process parameters influence on crystals quality], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2010, No. 7 (108), pp. 198-203.
9. Malyukov S.P., Stefanovich V.A., Lebedev G.A. Metod optimizatsii upravleniya tekhnologicheskim protsessom vyrashchivaniya kristallov leykosapfira [Method of optimization of control of technological process of growing sapphire crystals], Izvestiya TRTU [Izvestiya TSURe], 2006, No. 5 (60), pp. 210-214.
10. Suzuki T., Shirotsuki K., Taishi T., Hoshikawa К. Contact angle of sapphire melt and bubble generation on crucible material, Journal of Crystal Growth, 2014, No. 401, pp. 508-510.
11. Sokolov Yu.A. Avtomatizatsiya protsessa lit'ya izdeliy s napravlennoy i monokristallicheskoy strukturoy [Automation of the casting process products with directional and single-crystal structure], Pribory i sistemy. Upravlenie, kontrol' diagnostika [Instruments and systems. Management, control, diagnostics], 2003, No. 4, pp. 27-28.
12. Borodin A.V., Frantsev D.N. Development of a start-to-finish automation system for shaped sapphire crystals growth, Journal оf Crystal Growth, 2004, Vol. 275, pp. 2089-2097.
13. Lebedev G.A., Malyukov S.P., Stefanovich V.A., Cherednichenko D.I. Teplofizicheskie protsessy pri poluchenii kristallov leykosapfira metodom gorizontal'noy napravlennoy kristallizatsii [Thermal processes for the production of crystals of sapphire by horizontal directed crystallization], Kristallografiya [Crystallography], 2008, Vol. 53, No. 2, pp. 356-360.
14. Lebedev G.A., Malyukov S.P., Cherednichenko D.I. Issledovanie modeli zhidkofaznoy rekristallizatsii sloya polikremniya na sapfirovoy podlozhke [Study of liquid-phase recrystallization of a polysilicon layer on a sapphire substrate], Kristallografiya [Crystallography], 2009, Vol. 54, No. 3, pp. 553-558.
15. Malyukov S.P., Nelina S.N., Stefanovich V.A. Fiziko-tekhnologicheskie aspekty izgotovleniya izdeliy iz sapfira [Physico-technological aspects of manufacturing products from sapphire]. Germaniya: LAP LAMBERT Academic Publishing GmbH & Co. KG, 2012, 164 p.
16. Grin L.A., Budnikov A.T., Sidelnikova N.S., Adonkin G.T., Baranov V.V. Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization, Functional Materials, 2013, No. 20 (1), pp. 111-117.
17. Malyukov S.P., Klunnikova Yu.V. Nano- and Piezoelectric Technologies, Materials and Devices (chapter in book), New York: Nova Science Publishers, 2013, pp. 133-150.
18. Malyukov S.P., Klunnikova Yu.V. Advanced Materials (chapter in book), Springer Proceedings in Physics, 2014, Vol. 152, pp. 55-69.
19. Malyukov S.P., Klunnikova Yu.V. Informatsionnaya i ekspertnaya sistemy optimizatsii proizvodstva sapfira [Information and expert systems to optimize the production of sapphire], Programmnye produkty i sistemy [Software products and systems], 2013, No. 2, pp. 240-243.
20. Malyukov S.P., Klunnikova Yu.V. Programma rascheta i vybora parametrov rosta monokristallov leykosapfira [The calculation program and selection of parameters of growth of mono-crystals of leucosapphire], Sv. ob ofits. reg. progr. dlya EVM № 2008612944. 2008 [Certificate of official registration program for computer No. 2008612944. 2008].
21. Gaskarov D.V. Intellektual'nye informatsionnye sistemy: ucheb. dlya vuzov [Intelligent information systems: textbook for universities]. Moscow: Vyssh. shk., 2003, 431 p.
22. Kol'tsova E.M., Shilov N.I., Vasilenko V.A. Algoritmicheskoe i programmnoe obespechenie dlya protsessov massovoy kristallizatsii iz rastvorov [Algorithms and software for the processes of mass crystallization from solutions], Programmnye produkty i sistemy [Software Products and Systems], 1997, No. 1, pp. 37-43.
23. Ivanyan A.Yu. Issledovanie i optimizatsiya osnovnykh pokazateley sistem mekhanicheskoy obrabotki [Study and optimization of the main parameters of systems of mechanical treatment], Izvestiya TRTU [Izvestiya TSURe], 2004, No. 3 (38), pp. 288-289.
24. Akselrod M.S., Bruni F.J. Modern trends in crystal growth and new applications of sapphire, Journal of Crystal Growth, 2012, No. 360 (1), pp. 134-145.
25. Malyukov S.P., Klunnikova Yu.V. Advanced Materials – Studies and Applications (chapter in book). New York: Nova Science Publishers, 2015, pp. 65-76.

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