Article

Article title SIMULATION OF ELASTIC DEFORMATION AND PIEZOELECTRIC POTENTIAL ON THE SURFACE OF SEMICONDUCTOR ALN (0001) WITH BURRIED INN HEXAGONAL QUANTUM DOTS
Authors S.N. Chebotarev, M.L. Lunina, L.S. Lunin, A.S. Pashchenko, D.A. Arustamyan, G.A. Eremeev, A.N. Yatsenko
Section SECTION I. ELECTRONICS
Month, Year 04, 2016 @en
Index UDC 539.23
DOI
Abstract The calculation of strain energy and piezoelectric potential on the AlN (0001) semiconductor surface with recessed InN hexagonal quantum dots was done. In heterostructures with quantum dots due to the difference of the lattice constant there is an internal field of elastic stresses affecting the offset provisions of the extrema in the Brillouin zone and the appearance of the builtin electric field due to the piezoelectric effect. It is shown that surface of the quantum dot of any form can be represented as a set of flat triangles. It was found that this approximation of an analytic integration of Green"s functions, which allow to calculate the strain energy and the piezoelectric potential. Theoretical calculations show that near the top of the hexagonal quantum dots formed strong piezoelectric field. It is found that the distribution of strain energy distribution and the potential on the surface of the piezoelectric half hexagonal points symmetrically with respect to the axis. Above the quantum dot is formed strong tensile strain. The distribution of the piezoelectric potential is correlated with the strain distribution and also symmetrical. Painting piezoelectric perturbation in the central part is more pronounced than for mechanical stresses. Under the base of the quantum dot is formed a stable band with low values of the piezoelectric potential. The dependences obtained from a physical point of view can be explained by the fact that the crystal lattice of the substrate acting on the crystal lattice of the quantum dot leads to the formation of the border to the quantum dot layers of compressive stresses in the xy plane and tensile stresses in the z direction. In practice, this effect can be used to enhance the rate of capture of carriers quantum dots.

Download PDF

Keywords Strain energy; quantum dots heterostructures; Green’s function; ion-beam crystallization; piezoelectric potential
References 1. Xing E., Tong, C., Rong J., Shu S., Wu H., Wang L., Tian S., Wang L. Modulation of carrier dynamics and threshold characteristics in 1.3-μm quantum dot photonic crystal nanocavity lasers, Optics and Laser Technology, 2016, Vol. 82, pp. 10-16.
2. Shang X., Yu Y., Li M., Wang L., Zha G., Ni H., Pettersson H., Fu Y., Niu Z. Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots, Journal of Applied Physics, 2015, Vol. 118, No. 24, pp. 244503(1)-244503(4).
3. Chebotarev S.N., Pashchenko A.S., Irkha V.A., Dudnikov S.A. Simulation of volt-current voltage and spectral characteristics of InAs-QD/GaAs solar cells, International Journal of Alternative Energy and Ecology, 2013, No. 10 (132), pp. 28-32.
4. Chebotarev S.N., Pashchenko A.S., Irkha V.A., Dudnikov S.A. Ion-beam crystallization multi cascade photo heterostructures InAs-QD / GaAs, International Journal of Alternative Energy and Ecology, 2013, No. 6-2 (128), pp. 43-48.
5. Andreev A.D., Downes J.R., Faux D.A., O’Reilly E.P. Strain distributions in quantum dots of arbitrary shape, Journal of Applied Physics, 1999, Vol. 86, No. 1, pp. 297–305.
6. Chebotarev S.N., Pashchenko A.S., Williamson A., Lunin L.S., Irkha V.A., Gamidov V.A. Ion beam crystallization of InAs/GaAs(001) nanostructures, Technical Physics Letters, 2015, Vol. 41, No. 7, pp. 661-664.
7. Lunin L.S., Sysoev I.A., Alfimova D.L., Chebotarev S.N., Pashchenko A.S. A study of photo-sensitive inas/gaas heterostructures with quantum dots grown by ion-beam deposition, Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques, 2011, Vol. 5, No. 3, pp. 559-562.
8. Pieczarka M., Sek G. The ground state properties of In(Ga)As/GaAs low strain quantum dots, Physica B: Condensed Matter, 2016, Vol. 495, pp. 70-75.
9. Chebotarev S.N., Paschenko A.S., Lunin L.S., Irkha V.A. Features in the Formation of Ge/Si Multilayer Nanostructures under Ion Beam Assisted Crystallization, Technical Physics Letters, 2013, Vol. 39, No. 8, pp. 728–731.
10. Pashchenko A.S., Chebotarev S.N., Lunin L.S., Irkha V.A. Specific Features of Doping with Antimony during the Ion-Beam Crystallization of Silicon, Semiconductors, 2016, Vol. 50, No. 4, pp. 545–548.
11. Talochkin A.B., Chistokhin I.B., Mashanov V.I. Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy, Journal of Applied Physics, 2016, Vol. 119, No. 13, pp. 134302(1)-134302(5).
12. Chebotarev S.N., Pashchenko A.S., Lunina M.L. On the problem of analysis of elastic deformation on the surface of a semiconductor with a half-recessed quantum dots, Herald of Southern Scientific Centre RAS, 2015, Vol. 11, No. 3, pp. 30-37.
13. Lozovskii V.N., Chebotarev S.N., Irkha V.A., Valov G.V. Formation and use of position marks in scanning probe microscopy, Technical Physics Letters, 2009, Vol. 35, No. 8, pp. 737-738.
14. Medeiros R.G. Epitaxial growth of strained nanocrystals, Physica Status Solidi, 2002, Vol. 230, pp. 443-450.
15. Shetty A., Kumar M., Roul B., Vinoy K.J., Krupanidhi S.B. InN quantum dot based infra-red photodetectors, Journal of Nanoscience and Nanotechnology, 2016, Vol. 16, No. 1, pp. 709-714.
16. Downes J.R., Faux D.A., O’Reilly E.P. A simple method for calculating strain distributions in quantum dot structures, Journal of Applied Physics, 1997, Vol. 81, No. 10, pp. 6700-6702.
17. Hossain M., Abdullah-Al-Humayun M., Biswas M., Sadi M.A.H. A novel design of InN based quantum-dot laser operating at 1.55 μm, Advanced Materials Research, 2012, Vol. 403-408, pp. 4321-4327.
18. Pearson G.S., Faux D.A. Analytical solutions for strain in pyramidal quantum dots, Journal of Applied Physics, 2000, Vol. 88, No. 2, pp. 730-736.
19. Saito Т., Arakawa Y. Electronic structure of piezoelectric InGaN quantum dots in GaN calculated using a tight-binding method, Physica E, 2002, Vol. 15, pp. 169-181.
20. Glas F. Elastic relaxation of isolated and interacting truncated pyramidal quantum dots and quantum wires in a half space, Applied Surface Science, 2002, Vol. 188, pp. 9-18.

Comments are closed.