Authors S.N. Chebotarev, M.L. Lunina, L.S. Lunin, A.S. Pashchenko, D.A. Arustamyan, G.A. Eremeev, A.N. Yatsenko
Month, Year 04, 2016 @en
Index UDC 539.23
Abstract The calculation of strain energy and piezoelectric potential on the AlN (0001) semiconductor surface with recessed InN hexagonal quantum dots was done. In heterostructures with quantum dots due to the difference of the lattice constant there is an internal field of elastic stresses affecting the offset provisions of the extrema in the Brillouin zone and the appearance of the builtin electric field due to the piezoelectric effect. It is shown that surface of the quantum dot of any form can be represented as a set of flat triangles. It was found that this approximation of an analytic integration of Green"s functions, which allow to calculate the strain energy and the piezoelectric potential. Theoretical calculations show that near the top of the hexagonal quantum dots formed strong piezoelectric field. It is found that the distribution of strain energy distribution and the potential on the surface of the piezoelectric half hexagonal points symmetrically with respect to the axis. Above the quantum dot is formed strong tensile strain. The distribution of the piezoelectric potential is correlated with the strain distribution and also symmetrical. Painting piezoelectric perturbation in the central part is more pronounced than for mechanical stresses. Under the base of the quantum dot is formed a stable band with low values of the piezoelectric potential. The dependences obtained from a physical point of view can be explained by the fact that the crystal lattice of the substrate acting on the crystal lattice of the quantum dot leads to the formation of the border to the quantum dot layers of compressive stresses in the xy plane and tensile stresses in the z direction. In practice, this effect can be used to enhance the rate of capture of carriers quantum dots.

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Keywords Strain energy; quantum dots heterostructures; Green’s function; ion-beam crystallization; piezoelectric potential
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