|Article title||THE TECHNIQUES OF PARASITIC CAPACITANCES COMPENSATION ON THE SUBSTRATE OF INTEGRATED INDUCTANCES|
|Authors||N.N. Prokopenko, V.G. Sapogin, A.V. Bugakova, A.A. Ignashin|
|Section||SECTION III. SENSORS AND ELECTRONICS|
|Month, Year||05, 2016 @en|
|Abstract||The main techniques of the inherent compensation and cancellation of parasitic capacitances on the substrate of the integrated inductances (II), applied in microwave sensors and converters of high-frequency signals of automation and telecommunication systems, are considered. The analytic expressions for the frequency of period resonance of II of the well-known constructions and the suggested ones are obtained in this article. The basic new circuits of current compensation of parasitic capacitances on the substrate are examined, the main feature of which is an application of broadband current amplifiers, e.g. stages with common base or with common gate. The construction of inductance with a special screening layer under the metal film of II is examined. The variants of screening layer implementation in the form of conductive way and some metal leaves are considered. It is shown, that the compensation of parasitic capacitance to the substrate is possible due to the entering of two broadband inverting voltage amplifiers into the construction, when the screening layer is under the metal film of II. The compensation circuits of parasitic capacitances in II on the inverting voltage amplifiers are examined. The efficiency of this engineering solution for inductance depends on the circuit asymmetry and the identity of response lasing of compensation channels in particular. A new method of parasitic capacitances compensation of II without screening layer under the metal film of II is considered. It simplifies the production of II as the number of the spray conductive layers of metal are decreases. The connection of the compensation circuits in several points along II is provided for the multiloop inductance, which is characterized by the distributed constants. Two new constructions of inductivities, in which the frequencies of their period resonance are increased due to the application of the broadband current and voltage followers with transfer ratios close to one, are suggested. The frequencies of period resonance of II of the suggested constructions, including the frequencies for II, without screening layer, are determined. The example of the selective amplifier construction with the current compensation circuit of parasitic capacitance of its integrated inductance is given.|
|Keywords||Integrated inductance; parasitic capacitance on the substrate; compensation circuit; frequency of period resonance of inductance|
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