Article

Article title METHOD OF ZONE THERMAL RECRYSTALLIZATION FROM DISCRETE SOURCE
Authors A.N. Yatsenko, V.N. Lozovskii, S.N. Chebotarev, L.S. Lunin, A.S. Pashchenko, M.L. Lunina, G.A. Eremeev
Section SECTION III. NANOTECHNOLOGY
Month, Year 09, 2016 @en
Index UDC 538.9
DOI 10.18522/2311-3103-2016-9-134144
Abstract A new method of applying thin layers and island structures of large area thermal evaporation in a vacuum was proposed and investigated. A distinctive feature of this method is the use of a discrete source type. Mass transfer of growth substances from a source to the substrate is carried out through the thin vacuum zone. Digital power is a system of local evaporators located in the surface layer of a carrier plate. This construction enables the growth of the cell to obtain homoge-neous layers and structures committed to a plate large area, complete transfer of the growth sub-stances and impurities from the source to the substrate, a significant reduction in requirements for the vacuum in the chamber. The paper considers the influence of the size and the surface density of the local evaporators on the geometric properties of the deposited layer. The mathematical ex-pression is proposed that allows to explore the patterns of deposition process on the substrate material and assess the degree of heterogeneity of the thickness δ incremental layer. It is shown that to obtain uniform thickness of layers necessary to satisfy the condition l > lk, where l and lk – the thickness of the vacuum zone and its critical value, respectively. The experimental data confirm the conclusions of the theory. At the same time the real value δ is always slightly less than estimated. Proposals received by the germanium epitaxial layers of uniform thickness on silicon wafers with a diameter of 100mm. A typical half-width of the rocking curves for the germanium layer thickness 1000–3000 nm is about 150 arc seconds. Satisfactory evidence of X-ray studies allow us to judge the prospects of the proposed method.

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Keywords Zone thermal regrowth from a discrete source; silicon; germanium; epitaxial layers.
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