Authors S.A. Belousov, А.A. Nosov, S.I. Rembeza, N.N. Kosheleva
Month, Year 10, 2016 @en
Index UDC 538.95
DOI 10.18522/2311-3103-2016-10-1927
Abstract Considered is one of the most promising materials for gas sensor technology and transpar-ent electronics - zinc ortostannat (Zn2SnO4) – n-type semiconductor with a band gap of 3.4–3.6 eV with the structure of the inverse spinel. The aim of the work is to synthesize the Zn2SnO4 films and study their electrical properties. Gas sensitive Zn2SnO4 films were prepared by ion-beam sputtering ceramic target on glass substrates. Sputtering was carried out in Ar atmosphere for 300 minutes and substrate temperature of 80°C. Freshly films have a light brown color. According to X-ray analysis all the deposited films have an amorphous structure. Measurement of thickness of the deposited samples was carried out on the interference microscope MII-4. The film thickness was 3 microns. The concentration and mobility of charge carriers is measured using Hall effect in an magnetic field of 0.63 Tesla. The resistivity measured by four-probe method on an automated unit VIC-resistivity. As a result, studied was the structure of films and their electrical properties. It is found that the amorphous Zn2SnO4 film containing ZnO and SnO2 in a ratio of 2:1 has satisfactory transparency and high conductivity and its electrophysical parameters can be used as transparent conductive layers. Also, studies of Zn2SnO4 films gas sensitive properties have been conducted. After heat treatment at 580°C for 6 hours the film has good gas sensitivity to alcohol. High electrical conductivity of the films is due to thermal ionization of traps in the band gap Zn2SnO4. The results show that Zn2SnO4 film containing ZnO and SnO2 in a ratio of 2:1 can be used as sensitive elements of the gas sensors.

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Keywords Thin films; ortostannat zinc; gas sensitive properties; amorphous films, a gas sensor; electrical and optical properties.
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