Article

Article title PROBE NANOTECHNOLOGIES OF RESISTIVE MEMORY ELEMENTS BASED ON MEMRISTOR STRUCTURES
Authors V.A. Smirnov
Section SECTION III. NANOTECHNOLOGY
Month, Year 04, 2017 @en
Index UDC 621.38-022.532
DOI
Abstract The paper presents the results of the development of the technological process of forming an element of resistive memory based on memristor structures using probe nanotechnology on the surface of a thin titanium film. To do this, the actual solution is the use of new processes for profil-ing the substrate surface based on the scanning force nanolithography and the technology of local anodic oxidation of the surface of thin metal films. The regimes of nanoprofiling of photoresist by the force nanolithography method are studied. It is shown that when the tanning time is increased with the same force of the probe pressing against the sample surface, the depth of the formed PNS decreases. Dependences of the geometrical parameters of the PNS photoresist on the force of the probe pressing against the surface of the sample at different tanning times of the photoresist film, as well as the dependence of the width of the obtained PNS on the force of the probe clamping on the sample are obtained for different masking times. The effect of the main control parameters of the LAO process on the geometric dimensions of oxide nanostructures formed on the surface of a thin titanium film is studied. The influence of the amplitude of the voltage pulses in the LAO on the height and diameter of the ONS of titanium is investigated. It is shown that with an increase in the voltage amplitude for LAO from 5 to 29 V, an increase in the height of the ONS of titanium from 0.25 ± 0.1 to 5.9 ± 1.1 nm and a diameter from 101.4 ± 15.7 to 205.6 ± 44.7 nm, respectively. It is shown that oxide titanium nanostructures formed by the LAO method have a memristor effect that is uniform within the structure of the resistive memory element. When a negative voltage of 5 V is applied, the structure is switched to a state with a "high" resistance of 1.4 ± 0.4 GΩ, and when a positive voltage of 5 V is applied, the structure is switched to a state with a "low" resistance of 0.2 ± 0.1 GΩ. The obtained results can be used in the development of technological processes for manufacturing the elemental base of nanoelectronics using probe nanotechnology.

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Keywords Nanotechnology; nanomaterials, nanoelectronics; RRAM, memristor structures; scanning force nanolithography; local anodic oxidation; titanium film; oxide nanostructures.
References 1. Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu and Simon M. Sze Resistance random access memory, Materials Today, 2016, Vol. 19, No. 5, pp. 254-264.
2. Cong Ye, JiajiWu, Gang He, Jieqiong Zhang, Tengfei Deng, Pin He, HaoWang. Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory:
A Review, Journal of Materials Science & Technology, 2016, Vol. 32, pp. 1-11.
3. Strukov D, Snider G, Stewart D The missing memristor found, Nature. 2008, No. 453, pp. 80-83.
4. Kügeler C, Rosezin R, Linn E: Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM, Appl. Phys. A, 2011, 102, pp. 791-809.
5. Szot K., Rogala M., Speier W., Klusek Z. TiO2 – a prototypical memristive material, Nanotech-nology, 2011, No. 22, pp. 21.
6. Avilov V.I., Ageev O.A., Smirnov V.A. i dr. Formirovanie i issledovanie matritsy memristorov na osnove oksida titana metodami zondovoy nanotekhnologii [The formation and study of the memristor matrix based on titanium oxide by scanning probe nanotechnology], Izvestiya vysshikh uchebnykh zavedeniy. Elektronika [Proceedings of universities. Electronics], 2014, No. 2 (106), pp. 50-57.
7. Smirnov V.A., Ageev O.A. Nanolitografiya metodom lokal'nogo anodnogo okisleniya poluprovodnikov i metallov [Nanolithography by local anodic oxidation of semiconductors and metals], Izvestiya TRTU [Izvestiya TSURE], 2005, No. 9 (53), pp. 61.
8. Ageev O.A., Konoplev B.G., Smirnov V.A. i dr. Fotoaktivatsiya protsessov formirovaniya nanostruktur metodom lokal'nogo anodnogo okisleniya plenki titana [The photo-activation of processes of formation of nanostructures by local anodic oxidation film of titanium], Izvestiya vysshikh uchebnykh zavedeniy. Elektronika [Proceedings of universities. Electronics], 2010, No. 2 (82), pp. 23-30.
9. Ageev O.A., Polyakov V.V., Smirnov V.A., Kolomiytsev A.S. Issledovanie vliyaniya rezhimov fotonnoy stimulyatsii na protsessy nanolitografii metodom lokal'nogo anodnogo okisleniya [Study of the effect of photon stimulation on the processes nanolithography by local anodic oxidation], Izvestiya TRTU [Izvestiya TSURE], 2006, No. 9-1 (64), pp. 117.
10. Ageev O.A., Konoplev B.G., Smirnov V.A. i dr. Issledovanie rezhimov fotonnostimuli-rovannoy zondovoy nanolitografii metodom lokal'nogo anodnogo okisleniya plenki titana [The study of modes of potenetial-based probe nanolithography by local anodic oxidation film of titanium], Nano- i mikrosistemnaya tekhnika [Nano- and Microsystem technology], 2008, No. 1 (90), pp. 14-16.
11. Ageev O.A., Konoplev B.G., Smirnov V.A. i dr. Zondovaya fotonno-stimulirovannaya nanolitografiya struktur na osnove plenki titana [The probe photon-induced nanolithography structures based on films of titanium], Mikroelektronika [Microelectronics], 2007, Vol. 36,
No. 6, pp. 403-408.
12. Ageev O.A. Solodovnik M.S., Smirnov V.A. i dr. Issledovanie rezhimov formirovaniya oksidnykh nanorazmernykh struktur arsenida galliya metodom lokal'nogo anodnogo okisleniya [The study of the modes of formation of nanoscale oxide structures of gallium arsenide by local anodic oxidation], Izvestiya vuzov. Elektronika [Proceedings of universities. Electronics], 2012, No. 2 (94), pp. 43-50.
13. Ageev O.A., Solodovnik M.S., Smirnov V.A. i dr. Issledovanie rezhimov lokal'nogo anodnogo okisleniya epitaksial'nykh struktur arsenida galliya [Gallium arsenide epitaxial structures local anodic oxidation regimes investigation], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2011, No. 4 (117), pp. 8-13.
14. Konoplev B.G., Ageev O.A., Smirnov V.A., Kolomiytsev A.S., Il'in O.I. Modifikatsiya zondovykh datchikov-kantileverov dlya atomno-silovoy mikroskopii metodom fokusirovannykh ionnykh puchkov [Modification of the probe-cantilever for atomic force microscopy using focused ion beams], Nano- i mikrosistemnaya tekhnika [Nano- and Microsystem technology], 2011, No. 4, pp. 4-8.
15. Ageev O.A., Smirnov V.A., Kolomiytsev A.S., Gromov A.L. Primenenie metoda fokusirovannykh ionnykh puchkov dlya modifikatsii zondovykh datchikov atomno-silovykh mikroskopov [Application of focused ion beams for atomic force microscopy probes modification], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2011, No. 4 (117), pp. 166-171.
16. Bykov A.V., Kolomiytsev A.S., Polyakova V.V., Smirnov V.A. Profilirovanie zondov dlya skaniruyushchey zondovoy nanodiagnostiki metodom fokusirovannykh ionnykh puchkov [Profiling of the tips for scanning probe nanodiagnostics using focused ion beams], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2014, No. 9 (158), pp. 133-140.
17. Smirnov V.A. Primenenie zondovoy nanolitografii dlya formirovaniya elementov nanoelektroniki metodom lokal'nogo anodnogo okisleniya plenki titana [Application of probe nanolithography for nanoelectronics elements formation by local anodic oxidation of titanium film], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2014, No. 9 (158), pp. 15-24.
18. Ageev O.A., Ilin O.I., Kolomiytsev A.S., Rubashkina M.V., Smirnov V.A., Fedotov A.A. Investi-gation of effect of geometrical parameters of vertically aligned carbon nanotubes on their me-chanical properties, Advanced Materials Research, 2014, Vol. 894, pp. 355-359.
19. Smirnov V.A. Nanolitografiya elementov nanoelektroniki na osnove oksida titana [Nanolithog-raphy of elements of nanoelectronics based on titanium oxide], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences], 2016, No. 10 (183), pp. 27-40.
20. Smirnov V.A. Nanolithography by local anodic oxidation of thin titanium film, In book: Piezoelectrics and Nanomaterials: Fundamentals, Developments and Applications, 2015,
pp. 85-103.
21. Ageev O.A., Kolomiytsev A.S., Smirnov V.A., Kots I.N., Bykov A.V. Fabrication of advanced probes for atomic force microscopy using focused ion beam, Microelectronics Reliability, 2015, Vol. 55, No. 9-10, pp. 2131-2134.
22. Avilov V.I., Ageev O.A., Blinov Yu.F., Konoplev B.G., Polyakov V.V., Smirnov V.A., Tsukanova O.G. Modelirovanie protsessa formirovaniya oksidnykh nanorazmernykh struktur metodom lokal'nogo anodnogo okisleniya poverkhnosti metalla [Modeling of the process of forming the oxide nano structures by the local anodic oxidation of metal surface ], Zhurnal tekhnicheskoy fiziki [Journal of technical physics], 2015, Vol. 85, No. 5, pp. 88-93.
23. Ageev O.A., Blinov Yu.F., Il'in O.I., Konoplev B.G., Rubashkina M.V., Smirnov V.A., Fedotov A.A. Issledovanie rezistivnogo pereklyucheniya vertikal'no orientirovannoy uglerodnoy nanotrubki metodami skaniruyushchey zondovoy mikroskopii [Study the resistive switching of vertically aligned carbon nanotubes using scanning probe microscopy], Fizika tverdogo tela [Physics of the solid state], 2015, Vol. 57, No. 4, pp. 807-813.
24. Avilov V.I., Ageev O.A., Smirnov V.A., Solodovnik M.S., Tsukanova O.G. Issledovanie rezhimov nanorazmernogo profilirovaniya poverkhnosti epitaksial'nykh struktur arsenida galliya metodom lokal'nogo anodnogo okisleniya [The study of modes of nanoscale profiling of the surface of epitaxial structures of gallium arsenide by local anodic oxidation], Rossiyskie nanotekhnologii [Russian nanotechnology], 2015, Vol. 10, No. 3-4, pp. 42-46.

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