Article

Article title DEVELOPMENT OF THE RF MEMS SWITCH OF CAPACITIVE TYPE WITH A PERFORATED METAL MEMBRANE
Authors I. E. Lysenko, A. V. Tkachenko
Section SECTION I. ELECTRONICS AND NANOTECHNOLOGY
Month, Year 02, 2018 @en
Index UDC 621.318.51, 621.3.049.7
DOI 10.23683/2311-3103-2018-2-6-16
Abstract MEMS switches with electrostatic activation mechanism are applicable to m- and µ-wave spectrum. The metal parts of the switch hang over the lower metal electrode forming a capacitor with two parallel plates. When the offset voltage is applied between the upper and lower electrodes, the charges are redistributed, that leads to the appearance of electrostatic forces between the metal surfaces. These forces, regardless of the polarity of the applied voltage, force the freely suspended contact to move towards the lower electrode. As the metal membrane (or beam) begins to bend, appear elastic forces, directed in opposite stresses. As soon as the applied force reaches the threshold value, that happens when the electrostatic forces become more than elastic forces, the console falls sharply on the lower electrode, locking the electrical contacts. The console returns to its original position after the applied voltage falls below the threshold value of contact separation, which is usually much lower than voltage operation. Such hysteretic behavior is a characteristic of all micro switches. Two basic types of MEMS switches come to the fore: serial “metal-to-metal” contact switches and parallel (shunt) capacitive switches. Mainly a parallel capacitive MEMS switch consists of a metal bridge, a coplanar waveguide with a grounding signal and a dielectric layer placed on the lower electrode, which is a part of the signal line. Parallel capacitive MEMS switches have a number of advantages over PIN diodes, namely: they have low power consumption (µj during switching), high capacitance factor (20–100), can be made on a substrate of almost any materials. However, they are not devoid of disadvantages, the main of which are: relatively low switching speed (2–10 µs), high offset voltage (15-80 V), as well as high power switching applications (> 2 W). These disadvantages can be acceptable in a variety of applications, such as high-isolation and low-loss telecommunications switches, and relatively low-speed radars. The actual issue for the study is the development of the design of capacitive RF MEMS switch with high switching speed (≤5 µs), low offset voltage (≤5 V), as well as the study of its radio frequency and electromagnetic characteristics. The article presents an approach to determining the full capacity of the developed MEMS switch taking into account perforation in the form of square holes.

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Keywords RF MEMS parallel switch capacitive type; perforated; metal membrane with perforated holes; full capacity based on punching.
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