Article

Article title INTEGRATED MICRO-MECHANICAL TUNNEL ACCELEROMETER BASED ON CONTROLLED SELF-ORGANIZATION OF MECHANICALLY STRESSED SEMICONDUCTOR LAYERS
Authors M. A. Denisenko, A. S. Isaeva
Section SECTION I. ELECTRONICS AND NANOTECHNOLOGY
Month, Year 02, 2018 @en
Index UDC 621.3.049.77
DOI 10.23683/2311-3103-2018-2-25-33
Abstract At present, the market of inertial navigation and orientation systems pays much attention to the implementation of simple, compact and inexpensive solutions. It is explained by the emergence of new fields of application: wearable electronics, toys, game consoles, photo and video equipment, drones and robotic systems, etc. Adaptation of expensive precision instruments (based on laser, fiber optic or floating gyroscopes) for small objects is difficult, and sometimes is an impossible task. Sensors based on MEMS technology are the most promising for a wide range of applications. Micromechanical sensors (gyroscopes and accelerometers) and systems used massively for different tasks connected with complex aerospace and defense systems. Further micromechanics introduced into automotive security systems, medical systems, mobile communications and the production of smartphones, the children"s goods industry, etc. became possible as a result of increasing the manufacturability of MEMS. The article deals with the construction of a new integrated micromechanical linear acceleration sensor based on the tunneling effect for perspective inertial navigation and orientation systems of small-sized mobile objects, as well as for industrial needs; a method for constructing mechanically stressed GaAs / InAs semiconductor layers using a self-assembly operation is briefly described; it’s based on controlled self-organization, which allows for precise control of the formation of a tunnel contact with a gap about one nanometer. At the same time, high technological design is ensured, including through the possibility of its integral manufacturing by group processing methods using standard technological operations. The design of the tunnel accelerometer was simulated in the ANSYS CAD software. The results of mathematical modeling satisfy the requirements for modern micromechanical accelerometers and allow using them for the further development of structures of this type. The obtained data can be used in particular to calculate the recommended parameters in the development of techniques for designing tunnel velocity sensors and linear accelerations and for the development of more accurate models of MEMS structures.

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Keywords MEMS; micromechanical accelerometer; design; sensor; mathematical model.
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