|Article title||INTEGRATED MICRO-MECHANICAL TUNNEL ACCELEROMETER BASED ON CONTROLLED SELF-ORGANIZATION OF MECHANICALLY STRESSED SEMICONDUCTOR LAYERS|
|Authors||M. A. Denisenko, A. S. Isaeva|
|Section||SECTION I. ELECTRONICS AND NANOTECHNOLOGY|
|Month, Year||02, 2018 @en|
|Abstract||At present, the market of inertial navigation and orientation systems pays much attention to the implementation of simple, compact and inexpensive solutions. It is explained by the emergence of new fields of application: wearable electronics, toys, game consoles, photo and video equipment, drones and robotic systems, etc. Adaptation of expensive precision instruments (based on laser, fiber optic or floating gyroscopes) for small objects is difficult, and sometimes is an impossible task. Sensors based on MEMS technology are the most promising for a wide range of applications. Micromechanical sensors (gyroscopes and accelerometers) and systems used massively for different tasks connected with complex aerospace and defense systems. Further micromechanics introduced into automotive security systems, medical systems, mobile communications and the production of smartphones, the children"s goods industry, etc. became possible as a result of increasing the manufacturability of MEMS. The article deals with the construction of a new integrated micromechanical linear acceleration sensor based on the tunneling effect for perspective inertial navigation and orientation systems of small-sized mobile objects, as well as for industrial needs; a method for constructing mechanically stressed GaAs / InAs semiconductor layers using a self-assembly operation is briefly described; it’s based on controlled self-organization, which allows for precise control of the formation of a tunnel contact with a gap about one nanometer. At the same time, high technological design is ensured, including through the possibility of its integral manufacturing by group processing methods using standard technological operations. The design of the tunnel accelerometer was simulated in the ANSYS CAD software. The results of mathematical modeling satisfy the requirements for modern micromechanical accelerometers and allow using them for the further development of structures of this type. The obtained data can be used in particular to calculate the recommended parameters in the development of techniques for designing tunnel velocity sensors and linear accelerations and for the development of more accurate models of MEMS structures.|
|Keywords||MEMS; micromechanical accelerometer; design; sensor; mathematical model.|
|References||1. Berkeley S. Sensor & actuator centerб 2014 [Online]. Available: http://www-bsac.eecs.berkeley.edu/.
2. Konoplev B.G., Lysenko I.E. and Ezhova O.A. Evolution Criteria Fingers Hardness Electrode MEMS Comb Converters, Bioscience. Biotechnology research Asia, 2015, Vol. 12, No. 3.
3. Yuanfeng Zhang, Chupeng Lei, Woo Soo Kim. Design optimized membrane-based flexible paper accelerometer with silver nano ink, Applied Physics Letters 103, 073304 (2013). Doi: 10.1063/1.4818734, pp. 073304-1–073304-3.
4. Hierold C. From micro- to nanosystems: mechanical sensors go nano, Christofer Hierold 2004 J. Micromech. Microeng. 14, S1, pp. S1-S11.
5. Dao D.V., Nakamura K., Bui T.T., Sugiyama S. Micro/nano-mechanical sensors and actuators based on SOI-MEMS technology, Adv. Nat. Sci: Nanosci. Nanotechnol. 2010, 1 013001,
6. Konoplev B.G., Pristupchik N.K., Ryndin E.A. A Simulation Method for Displacement Transducers Based on the Tunnelling Effect, Vestnik Yuzhnogo Nauchnogo Tsentra, 2012, No. 8 (4), pp. 20-26, (In Russian).
7. Boyden E., El Rifai O., Hubert B., Karpman M., Roberts D. A High-Performance Tunneling Accelerometer. MIT Term Project Paper 6.777, Introduction to Microelectromechanical Systems, Spring 1999.
8. Bustillo J.M., Howe R.T., Muller R.S. Surface Micromachining for Microelectromechanical Systems, Proceedings of the IEEE, August 1998, Vol. 86, No. 8, pp. 1552-1574.
9. Dong H., Jiaa Y., Haoa Y., Shenb S. A Novel out-of-plane MEMS Tunneling Accelerometer, Sensors and Actuators A 120, 2005, pp. 360-364.
10. Prinz V.Ya. Precise semiconductor nanotubes and nanoshells fabricated on (110) and (111) Si and GaAs, Physica E, 2004, Vol. 23, pp. 260-268.
11. Denisenko M.A., Konoplev B.G., Isaeva A.S., Lysenko I.E. Integrated Micro-Mechanical Tunneling Accelerometer, J. Pharm. Sci. & Res., 2017, Vol. 9 (10), pp. 2155-2158.
12. Bernardi A., Goni A.R., Alonso M.I., Alsina F., Scheel H., Vaccaro P.O. and Saito N. Probing residual strain in InGaAs/GaAs micro-origami tubes by micro-Raman spectroscopy, J. Appl. Phys. 99, 063512 (2006). Doi: 10.1063/1.2183353, pp. 063512-1–063512-6.
13. Chun I.S., Bassett K., Challa A., Li X. Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes, Applied Physics Letters. 96, 251106, 2010, pp. 251106-1–251106-3.
14. Chun I.S., Li X. Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes, IEEE Transactions on Nanotechnology, July 2008, Vol. 7, No. 4, pp. 493-459.
15. Prinz A.V., Prinz V.Ya., Seleznev V.A. Semiconductor micro- and nanoneedles for microinjections and ink-jet printing, Microelectronic Engineering. 67–68 (2003). pp. 782-788.
16. Nikishkov G.P. Curvature estimation for multilayer hinged structures with initial strains, Journal of Applied Physics, 2003, Vol. 94 (8), pp. 5333-5336.
17. Tsui Y.C., Clyne T.W. An analytical model for predicting residual stresses in progressively deposited coatings .Part 2: Cylindrical geometry, Thin Solid Films, 1997, Vol. 306, pp. 34-51.
18. Ryndin E.A., Pristupchik N.K. Integrated Micromechanical Tunneling Accelerometer Based on Driven Self-Assembly of Strained GaAs/InAs Layers, Izvestiya SFEDU. Engineering Sciences, 2009, No. 01, pp. 129-134.
19. Konoplev B., Lysenko I., Ryndin E., Ezhova O., Bondarev F. Research of the micromechanical three-axis accelerometer, Proceedings of SPIE - The International Society for Optical Engineering, 102241B (2016). Doi: 10.1117/12.2266766.
20. Konoplev B., Ryndin E., Lysenko I., Denisenko M., Isaeva A. Highly sensitive devices for primary signal processing of the micromechanical capacitive transducers, Proceedings of SPIE – The International Society for Optical Engineering 102241E (2016). Doi: 10.1117/12.2266562.