Article

Article title SIZE EFFECT IN MEMRISTOR NANOSTRUCTURES BASED ON TITANIUM OXIDE TO CREATE ELEMENTS OF ARTIFICIAL INTELLIGENCE SYSTEMS AND SYNAPTRONICS
Authors V. I. Avilov, V. A. Smirnov, N. A. Sharapov
Section SECTION I. ELECTRONICS AND NANOTECHNOLOGY
Month, Year 02, 2018 @en
Index UDC 621.38-022.532
DOI 10.23683/2311-3103-2018-2-34-46
Abstract The paper presents the results of theoretical and experimental studies of the geometric parameters effect (size effect) on the resistive switching of memristor structures based on titanium oxide formed by the method of local anodic oxidation (LAO). Using numerical simulation, the oxidizer flux values to the substrate surface, the titanium oxide growth rate, the oxide profile the oxide nanostructure (ONS) formed, and also the height and diameter dependences were determined on the basis of the calculation of the electric potential distribution and the oxygen ion concentration in the probe-air-oxide- from the basic control parameters of the LAO (impulses amplitude and duration of the applied voltage, the relative humidity level inside the process chamber, the probe-substrate distance). It is shown that the modeled ONS profile correlates well with the experimental results. The experimental studies results of the titanium ONS thickness effect formed by the LAO method on their memristor properties are presented. It is shown that the titanium ONS obtained by the LAO method exhibit a memristor effect without additional electroforming and switch between the high (HRS) and low (LRS) resistance states at switching voltages less than 3 V. It is established that an increase in the thickness of the ONS from 4.5 ± 0.7 to 7.9 ± 0.3 nm leads to a decrease in the ratio of resistances of oxide nanostructures in the states of HRS and LRS by a resistance from 250 to 10.7, respectively. The obtained results can be used in the development of technological processes for manufacturing elements of artificial intelligence systems and synaptronics based on memristor nanostructures.

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Keywords Nanotechnologies, nanomaterials; nanoelectronics; RRAM; memristor structures; local anodic oxidation; titanium film; oxide nanostructures.
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